Persamaan Irf 640. IRF540AAdvanced Power MOSFETFEATURESBVDSS = 100 V Avalanche Rugged TechnologyRDS (on) = 0052 Rugged Gate Oxide Technology Lower Input CapacitanceID = 28 A Improved Gate Charge Extended Safe Operating AreaTO220 175 C Operating Temperature Lower Leakage Current 10 A (Max) @ VDS = 100V Lower RDS (ON) 0041 (Typ)1231Gate 2.
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IRF640 18A 200V NChannel Power MOSFET IRF644 14A 250V NChannel Power MOSFET IRF720 33A 400V NChannel Power MOSFET IRF730 55A 400V NChannel Power MOSFET IRF740 10A 400V NChannel Power MOSFET IRF820 25A 500V NChannel Power MOSFET IRF830 45A 500V NChannel Power MOSFET IRF840 8A 500V NChannel Power MOSFET IRF1010N 85A 55V N.
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NCHANNEL 100V 0055Ω 22A TO220 LOW GATE CHARGE STripFET™ II POWER MOSFET Kersemi Electronic Co IRF540 6Mb / 7P Power MOSFET Dynamic dV/dt Rating Repetitive Avalanche Rated New Jersey SemiConduct IRF540 984Kb / 3P 25A and 28A 80V and 100V 0077 and 0100 Ohm NChannel Power MOSFETs.
Irf640 Pinout Equivalent Description Features Applications Components Info
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IRFZ44N MOSFET Datasheet pdf Equivalent. Cross Reference Search
IRF9540 wwwvishaycom Vishay Siliconix S210852Rev C 16Aug2021 1 Document Number 91078 For technical questions contact hvm@vishaycom THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE.
